LT3745
APPLICATIONS INFORMATION
V OUT + V D V IN(MAX) – V OUT
Q G (MAX) =
InductorSelection
The critical parameters for selection of an inductor are
inductance value, DC or RMS current, saturation current,
and DCR resistance. For a given input and output voltage,
the inductor value and switching frequency will determine
the peak-to-peak ripple current, ?I L . The ?I L value usually
ranges from 20% to 50% of the maximum output load
current, I OUT(MAX) . Lower values of ?I L require larger and
more costly inductors; higher values of ?I L increase the
peak currents and the inductor core loss. An inductor
current ripple of 30% to 40% offers a good compromise
between inductor performance and inductor size and cost.
However, for high duty cycle applications, a ?I L value of
~20% should be used to prevent sub-harmonic oscillation
due to insufficient slope compensation.
The largest inductor ripple current occurs at the highest
V IN . To guarantee that the ripple current stays below the
specified maximum, the inductor value should be chosen
according to the following equation:
L ≥ ?
V IN(MAX) + V D f SW ? ? I L
The inductor DC or RMS current rating must be greater
than the maximum output load current I OUT(MAX) and its
saturation current should be higher than the maximum
inductor current I L(MAX) . To achieve high efficiency, the
DCR resistance should be less than 0.1Ω, and the core
material should be intended for high frequency applications.
Power MOSFET Selection
Important parameters for the external P-channel MOSFET
M1 include drain-to-source breakdown voltage (V (BR)DSS) ,
maximum continuous drain current (I D(MAX) ), maximum
gate-to-source voltage (V GS(MAX) ), total gate charge (Q G ),
drain-to-source on resistance (R DS(ON) ), reverse transfer
capacitance (C RSS ). The MOSFET V (BR)DSS specification
should exceed the maximum voltage across the source to
the drain of the MOSFET, which is V IN(MAX) plus V D . The
I D(MAX) should exceed the peak inductor current, I L(MAX) .
Since the gate driver circuit is supplied by the internal
6.8V V IN referenced regulator, the V GS(MAX) rating should
be at least 10V.
Each switching cycle the MOSFET is switched off and on, a
packet of gate charge Q G is transferred from the V IN pin to
the GATE pin, and then from the GATE pin to the CAP pin.
The resulting dQ G /dt is a current that must be supplied to
the C CAP capacitor by the internal regulator. The maximum
22mA current capability of the internal regulator limits the
maximum Q G(MAX) it can deliver to:
22mA
f SW
Therefore, the Q G at V GS = 6.8V from the MOSFET data
sheet should be less than Q G(MAX) .
For maximum efficiency, both R DS(ON) and C RSS should
be minimized. Lower R DS(ON) means less conduction loss
while lower C RSS reduces transition loss. Unfortunately,
R DS(ON) is inversely related to C RSS . Thus balancing the
conduction loss with the transition loss is a good criterion
in selecting a MOSFET. For applications with higher V IN
voltages (≥24V) a lower C RSS is more important than a
low R DS(ON) .
Catch Diode Selection
The catch diode D1 carries load current during the switch
off-time. Important parameters for the catch diode includes
peak repetitive reverse voltage (V RRM ), forward voltage
(V F ), and maximum average forward current (I F(AV) ). The
diode V RRM specification should exceed the maximum
reverse voltage across it, i.e., V IN(MAX) . A fast switching
Schottky diode with lower V F should be used to yield lower
power loss and higher efficiency.
In continuous conduction mode, the average current
conducted by the catch diode is calculated as:
I D(AVG) = I OUT ? (1 – D)
The worst-case condition for the diode is when V OUT is
shorted to ground with maximum V IN and maximum I OUT
at present. In this case, the diode must safely conduct
the maximum load current almost 100% of the time. To
improve efficiency and to provide adequate margin for
short circuit operation, a Schottky diode rated to at least
the maximum output current is recommended.
3745f
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